Growth, structure and morphology of epitaxial Fe(0 0 1) films on GaAs(0 0 1)c(4 × 4)
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چکیده
منابع مشابه
Step structure and surface morphology of hydrogen-terminated silicon: (0 0 1) to (1 1 4)
We have determined the equilibrium step structures and surface morphology for the whole range of monohydrideterminated (0 0 1)-terrace-plus-step silicon surfaces using scanning tunneling microscopy. The transformation in the equilibrium Si surface morphology caused by H-termination can be categorized into three different regimes delineated by the types of steps present on the clean surfaces. On...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2014
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/27/3/036001